| PART |
Description |
Maker |
| TX2-5V TX2-12V TX2-3V TX2-L-1.5V TX2-48V TX2-L2-H- |
2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 2阿继电器容量高浪涌电
RELAY, SOLID STATE 40A 240VAC
FILM/M CAPACITANCE=0.1 VOLT=63
2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE
|
Nais(Matsushita Electric Wo...
Panasonic, Corp.
YEONHO Electronics Co., Ltd.
NAIS[Nais(Matsushita Electric Works)]
http://
|
| 2SB788 2SB0788 |
For High Breakdown Voltage Low-noise Amplification
|
PANASONIC[Panasonic Semiconductor]
|
| 2SD2240 2SB1463 |
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
|
PANASONIC[Panasonic Semiconductor]
|
| BF421 BF423 Q62702-F496 Q62702-F532 |
PNP Silicon Transistors With High Reverse Voltage
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve...
From old datasheet system
NPN Silicon Transistors with High Reverse Voltage
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
NPN Silicon RF Transisrors
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管（高耐压l低集电极发射极饱和电压）
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| EF2-3NUH-L ED2-24NJ |
Ultra-low power, compact and lightweight, High breakdown voltage, Surface mounting type
Ultra-low power, compact and lightweight, High breakdown voltage, Surface mounting type
|
NEC
|
| 2SC3646 |
High-Voltage Switching Applications
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| BFN26 Q62702-F1065 BFN24 Q62702-F976 |
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| RD10JS RD11JS RD12JS RD13JS RD15JS RD16JS RD18JS R |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode
8.2 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34
surface mount silicon Zener diodes 表面贴装硅稳压二极管
DO-34 Package Low noise/ Sharp Breakdown characteristics 400 mW Zener Diode
DO-34 Package Low noise Sharp Breakdown characteristics 400 mW Zener Diode
Constant Voltage diode 400mW DO-34
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| 2SA1514K |
High breakdown voltage.Collector-base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
| HDSE8U60G |
High breakdown voltage
|
SemiHow Co.,Ltd.
|
